on- state current 12 amp fs1209.w standard scr these series of silicon c ontrolled r ectifier use a high performance pnpn technology. these parts are intended for general purpose applications where high gate sensitivity is required. absolute maximum ratings, according to iec publication no. 134 on- state current average on-state current non- repetitive on-state current non- repetitive on-state current fusing current peak gate current peak gate dissipation gate dissipation operating temperature storage temperature soldering temperature it(rms) parameter conditions value unit gate trigger current 2 ma to 15 ma off-state voltage 200 v 800 v symbol i t(av) itsm itsm i2t igm pgm p g(av) tj tstg tsld 180o conduction angle, t c = 110 oc half cycle, q = 180 o, tc = 110 oc half cycle, 60 hz half cycle, 50 hz tp = 10ms, half cycle 20 s max.20 s max. 20ms max. 10s max. (-40(-40 aa a a a2s a ww ococ oc repetitive peak off state voltage parameter conditions unit symbol vdrm vrrm rgk = 1 kw v to to 12 8 146140 98 4 10 1 +125)+150) 260 to220-f ( fully isolated case) k a g viso r.m.s. isolation voltage 50/60 hz sinusoidal waveform 2.500 vac vrgm reverse gate voltage 5 v voltage b 200 d 400 m 600 s 700 n 800 apr - 05
part number information fagor scr current case voltage sensitivity f s 12 09 b w 00 forming tu packaging electrical characteristics off-state leakage current parameter conditions sensitivity uni symbol igt gate trigger current idrm vd = 12 vdc , rl = 140w . tj = 25 oc 1.30.2 vv mama max min max 50 max / irrm vtm on- state voltage vgt gate trigger voltage vgd gate non trigger voltage ih holding current di / dt rth(j-a) critical rate of current rise thermal resistance junction-amb for dc oc/w vd = vdrm , tj = 125 oc tj = 25 oc vr = vrrm , at it = 24 amp, tp = 380 s, tj = 25 oc it = 500 ma, tr 100 ns, f = 60 hz,t j = 125 oc vd = 12 vdc , rl = 140w , tj = 25 oc vd = vdrm , rl = 3.3kw,t j = 125 oc a min a/s tj = 125 oc rd dynamic resistance max 30 mw 5 max il ma latching current ig = 1.2 igt v/s dv / dt critical rate of voltage rise min 2.9 rth(j-c) thermal resistance junction-case for dc oc/w vt (o) tj = 125 oc threshold voltage max 0.80 v ig = 2 x igt rgk = 1kw rgk = 220w vd = 0.67 x vdrm , gate opent j = 125 oc m a min fs1209.w max 1.5 v max max 0.5 for ac 360 o conduction angle 2s =1cm standard scr 09 2 15 20 40 200 50 apr - 05
fs1209.w standard scr fig. 1: maximum average power dissipation versus average on-state current. 1.0 k = [zth(j-c) / rth (j-c)] fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 1e+0 tp (s) 0.5 0.2 0.1 fig. 2: average and d.c. on-state current versus case temperature. i gt , ih (tj) / i gt , ih (tj = 25 oc) fig. 4: relative variation of gate trigger current, holding and latching current versus junction temperature. tj (oc) -40 -20 20 60 80 10 0 40 120 140 igt ih & il 2.01.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 fig. 5: non repetitive surge peak on-state current versus number of cycles. fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2t. i t(av)(a) 0 25 50 75 100 125 p (w) tc (oc) i t(av)(a) 0 2 4 6 8 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 1 3 5 7 9 1 3 5 7 9 11 13 10 1 10 100 1000 i tsm number of cycles tj initial = 25 oc f = 50 hz 0 20 40 60 80 100 120 140 160 1 itsm (a). i2t (a2s) tp(ms) itsm i2 t tj initial = 25 oc 10 1000 100 10 apr - 05
fs1209.w standard scr fig. 7: on-state characteristics (maximum values). package mechanical data to220-f 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 itm(a) 4.0 1000 vtm(v) 4.5 100 10 1 5.0 tj = 25 oc tj = tj max. tj max vt(o) = 0.85 v rd= 30 m apr - 05 a b d e f f1 f2 g g1 h l l3 l6 l7 diam. ref. dimensions milimeters min. nominal max. 3.55 2.03 0.35 0.25 0.70 0.70 4.88 2.34 9.65 12.70 26.90 14.22 8.30 3.00 l1 2.34 4.50 2.70 0.60 0.60 1.30 1.70 5.00 2.50 10.15 13.35 28.35 15.00 8.40 3.20 3.00 3.75 4.90 2.96 0.70 1.01 1.78 1.78 5.28 2.74 10.67 14.73 31.20 16.50 9.59 3.28 6.35 2.93 3.70 w
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